Gaas Microwave Monolithic Integrated Circuit

Cheng Zhiqun (mlcroeIectromcs and soIld state electromcs)Dlrected by Xla GUanqUnWlth raPld develoPmen of m1crowave conunurucatlon technology lt set highdemands on conunumcatlon devlce Monollthic nucrowave IlltCgraed clrcmtSgradual1y take places wavgude system and hybnd 1lltCgrated c1rcultS ln thermcroware field fOr 1ts advantages SUch as small s1ze, 1lgh we1gh, high rel1abllitystablllty and so on Mixer and power arnpl1fier are 1mPortan parts of m1crowavecommumcation system The researches of GaAs MESFET MMIC mlxer andAlGM/GaAs HBT MMIC power amPllfier ln dss paPer are rePorted. Speclficconients are abstracted as followingThe WC passive comP-s SUch as reslstors, caPac1tOrs and lndtri arestUdled Their eqmvaIent clrcwt models and des1gn method are g1venMESFET's and HBTs oPeratlon pnnclple are lntroduced Extrgntmg parameters'formulas of MESFET eqmvalent clrcult are glven New PSPICE DC model of duaJ-gate MESFET 1s establlshed The measuremeflt resultS mean that the model ls nghThe mam Processes 1n MMIC are researched A process1ng control mas lsdesigned MMIC processmg paramters ln our fOundry ls gOttch These paraxnetersform an mportant basls for the deslgn of GaAs MESFET MMIC chipsTwo lQnds of MESFET MMIC mIxer and a balance dual-gate MESFET MMICmIXer are des1gned Anong them, the balance dual-gate MESFET m1xer MMIC lsthe first tO be deSgned m our cOUntry After three kmds of m1xers are fabncated, themeasurement results show that three kinds of mlxers have m1xer fimcton 1n S bandand the lsolatlon of each slgnal ports ls about l8~20dB, the converslon frequencygsin ls -5~4dB The chip slze ls 0 75x0 75mp'The charactenstlcs of AlGaInPGaAs HBT are analyzed The deeP levels ofAlGaInP/GaA matenal axe measured TWO deeP levels of AlGalnP are 0 42eV and0 59eV respectlvelyThe matenal constrUctIon, layout deslgn, and domam design of AlGaInP/GaAsHBT are carefully researched Two smte of processlng masks are deslgnedThe key PrOcesses of AlGaInPGaAs HBT mesa process technology areresearchd mchiding PrOtOn 1mPlam lsolatlon, AlGaInP material We etching andallgn axnong masksThe most advanced mlcrowave on-llne measurement system at hOme lsestabIlshed Cascade MICrotech Surnnut l2000 mlcrowave probe platform andHP8722D vector netwrk analyzer are lts main devlces Its measurement frequencyls 50MHZ~0GH, 1ts cchl temerAn ls -65"C~400"The AlGM/GaAs mlcrowave power HBT whlch 1s small s1ze and comPnsed ofmW cells 1s first to be des1gned and fabncated It has extraPolated 22GHz fT and38GHZ fm. OutPut power of 25dBm with power added efficlency of 50% and outPutPOwer of 30M with power added effic1ency of 64% are achieved at operatlonfrequency 2 GHz, class A, oPeration voltage 3V and l0V resPectrVelyBoth AlGWs HBT POwe amPllfier MMIC and one drVlded lnto twoPOwe sPlittensynthsizer are untially deslgned and oPtinuzed and sunulated lnTouchstOne...