The Search Of MMIC Wideband Power Ampliifer Based On The GaAs Material

As the continually develop of the semiconductor technology, the monolithicmicrowave integrated circuit is used widely because of its smaller volume, lower cost,lower noise, lower power consumption and higher reliability. At modern times, thepower amplifier has a decisive role in the wireless communication systems; This paperis titled as “The search of MMIC wideband power amplifier based on the GaAsmaterial”, in which a MMIC wideband power amplifier based on the GaAs materialwork in6-12GHz is studied and realized. The abstract of the specific content is asfollows:Firstly the development history and prospect of the MMIC is introduced. The basictheory and the mainly qualification of the power amplifier is also recommend. Then the0.25um PHEMT craft which is adopted by this chip is told in this paper. Small-signaland large-signal model parameter extraction method for PHEMT model are alsopresented in the paper. Through describing the design and simulation process of thispower amplifier which is accomplished in ADS work environment, the power amplifieris constituted by three-level PHEMT, the gate-widths are40μm*10，80μm*10，85μm*10*2, and the final chip size is2.5mm*1.3mm. Finally, the chip is tested in twostyles and the result indicates that in the working band, the Gain is more than16dB，the VSWR is less than2.0，the Pastis more than30dBm and the PAE is more than20%，the result reaches the prospective design demand.