Research On Integrated Monolithic Power Amplifiers And T/R S Witches For RF And Microwave Applications

"All telecommunications will be completely untethered and mobile", this is the "Moore's Law" in communication industry. Wireless communication becomes an important part of modern society. Recently, due to the fast development of commercial and civil communication application, transceivers with high performance are required. However, the traditional low frequency resources are saturated, which causes commercial communication begin to enter Ku,K,Ka, and even Q,U,V frequency band. Monolithic-Microwave-Integrated-Circuir(MMIC) is the most attractive option in high frequency high performance wireless system design.Power amplifier(PA) and T/R switch are the key components in wireless communication transceivers. However, for domestic PA research, most of them focus on PA in low frequency band, and the PA research in high frequency band are relatively rare and the performance are not good. This paper proposed a Kαband MMIC power amplifier with high output power and high power gain, fabricated with 0.15μm GaInAs pHEMT power process. The PA uses block design, and its output matching network not only realizes impedance matching, power combining and DC biasing, but also achieves harmonic suppressing. Lange couplers are utilized for their good port matching performance in PA's input and output ports.The layout of PA is carefully designed and it has electromagnetic(EM) simulation results. Furthermore, the on-chip measurement results are compared with the EM simulation results. The performance of this PA reaches the international high frequency PA performance level, and also exhibits relatively high performance on domestic high frequency PA with high output power and high power gain. It is important for the development of next millimeter-wave communication. This paper also proposed another Kαband MMIC power amplifier with moderate output power, which has two-stages topology and achieves relatively high efficiency with moderate output power and power gain.T/R switch with high performance is used for switching signal in wireless communication transceiver. The insertion loss and power handling ability can directly determine the output power and noise figure of the whole transceiver. For mobile communication, especially the 3G and 4G communication, single-pole-multi-throw switches are indispensable for multi-mode and multi-band application. This paper proposed a single-pole-nine-throw(SP9T) switch for 3G handset application, fabricated with 0.5μm GaAs pHEMT process. The SP9T has an innovative topol-ogy, which realizes high isolation between transmit and receive paths. In order to improve the power handling ability of the SP9T, "on" state control voltage are raised through a boost circuit in digital logic control chip. Measurement results are compared with the EM simulation results. This paper also analyzes the parasitic effect for high frequency switch design. A Ka band MMIC single-pole-double-throw(SPDT) switch is designed with 0.15μm GaInAs pHEMT power process. A shunt resonance method is utilized to improve the isolation performance of the switch. The SPDT switch is successfully taped-out, has not measured yet.Moreover, some of the other components in a transceiver system are also researched and designed in this paper, including ultra wide-band single-stage low noise amplifier(LNA), ultra wide-band two-stages LNA and ultra wide-band Mixer with 0.13μm SiGe BiCMOS. All MMICs have EM simulation results. The ultra wide-band single-stage LNA is on-chip measured, and measurement results are compared with the EM simulation results.