Experimental Study On Transient Charge Collection From Single Event Effect

The single event effect(SEE) that occurs in the space radiation environment is induced by the energy deposition in the device, which is produced by a single high-energy particle. The ionization charges generated by the deposited energy form the transient pulse, which will result in the change of the working state or the function failure of the device. High-energy particles generate ionization charges through the direct or indirect ionization mechanism in the device. These ionization charges are collected by the sensitive nodes of the circuit through drift, diffusion and combination effect. If the collected charge exceeds a certain threshold, the device working state will be changed and may cause function failure. Consequently, the formation of transient charge pulse, which is induced by the collection of ionization charges generated by high-energy particle, is the root of different types of SEE. The research on ionization charge collection is the basis to study all kinds of SEE. With the development of semiconductor device technology and the decrease of feature size of transistors, the understanding of the SEE should be much more accurate in terms of temporal and spatial scales. Hence the real time test of SEE charge collection in the device is required to realize the SEE parameter extraction, modeling, propagation mechanism investigation and reinforcement design. In this paper, we carried out experimental study of SEE transient charge pulse using the pulse laser to investigate the charge collection and transient charge pulse of SEE. The investigations of transient charge measurement and charge collection are of great significance to the study of SEE.The main research contents and results of this paper are as follows;(1) The test of single event upset(SEU) transient charge effect was carried out on the typical CMOS process device(SRAM).We carried out SEU experiment of SRAM devices and determine the threshold and cross section of the SEU effect using the pulsed laser detection system. We used the pulse laser test system and the fast pulse charge collection test system to measure the charge of the SRAM chip collected at the power supply pin. The relationship between the charge and the SEU effect turning cross section was initially established.(2) The test of SET transient charge effect was carried out on the typical BJT process device.The SET features of linear devices were carefully evaluated and various factors affecting the SET waveforms were studied. Full chip laser radiation assessment was carried out to find the sensitive position and analyze the worst SET case of the chip.(3) According to the SET pulse of the BJT device, the experimental study of SET pulse protection was carried out:After modelling the circuit, we injected charges into the sensitive nodes and designed the filter circuit using the simulation software Hspice. Finally, the protective design was verified by experiments. The rationality of the design under different application situation was also discussed.