A Pulse Model Design And Research For Single-event Transient Simulation

With the continuous improvement of science and technology,the people's exploration of outer space has been continuously deepened with the help of spacecraft.Aerospace electronics is the core of spacecraft.The reliability and performance of aerospace electronics are directly related to the successful completion of on-orbit mission of the spacecraft.Astronautic electronic devices work in a space environment,high-energy particles radiate to the semiconductor material will produce electron-hole pairs,resulting in electron-hole pairs in the device sensitive junction area is separated by electric field,resulting in transient pulse current,resulting in Single Event Transient(SET)effects,seriously affecting the stability and performance of spacecraft electronic systems,and even lead to the mission of the spacecraft failed.With the ever decreasing feature size of semiconductor integrated circuit manufacturing process,the node capacitance of the device is also reduced continuously,and the SET effect is increasingly prominent.For SET effects,circuit designers generally use computer simulation methods to evaluate the ability of the circuit against SET effects.This paper based on the 65 nm CMOS bulk silicon technology,using the computer simulation method to analyze the SET effect mechanism,established a SET effect simulation process based on 65 nm bulk silicon Process,and the realization of the circuit-level SET pulse model,and the application of the SET pulse model is introduced.