| As the device scales down to the nanometer scale,the aerospace integrated circuit’s sensitivity to single event transient effects caused by radiant has increased sharply.Transient pulse width,as one of the important factors for measuring the single event transient effect,provides support for the system to predict and mitigate the single-event hazards.The pulse width distribution determines the soft error rate and the maximum pulse width value determines the tolerance threshold of the circuit to single event transients.Therefore,pulse width accurate measurement is an important part of designing high-performance harden integrated circuits.Based on the existing single event transient measurement circuit,this paper proposes a radiation-resistant high-precision single event transient measurement circuit with superior performance,and completes the performance verification through Spice simulation tools.The main research work and results are as follows:1.Illustrates the importance of measuring the SET pulse width to reduce the system error rate by the study of the memory cell.Using the Spectre simulation tool to analyze the radiation hardening effect of basic latch,TMR latch,LPSET latch and LCHR latch.The simulation results show that:(1)the basic latch has neither the ability to filter SET nor the ability to resist SEU,and its upset threshold value is 0.638Me V·cm~2/mg and0.64Me V·cm~2/mg in the 28nm.(2)TMR latch only has anti-SEU reinforcement effect,while LPSET latch and LCHR latch have good reinforcement effect on SEU and SET.(3)LPSET latch filtering SET ability depends on the delay element,LCHR latch filtering SET ability depends on the Schmitt trigger.(4)The selection of the memory unit reinforcement scheme depends on the SET pulse distribution.Therefore,accurate measurement of single event transient pulse width is an important way to design high-performance rugged memory and reduce system soft errors.2.A universal radiation-resistant high-precision single event transient measurement circuit for measuring the SET pulse distribution is proposed.The measurement circuit mainly includes three parts:the first measurement circuit using a latch as a quantization unit but the second and the third test measurement circuit using an inverter as a quantization unit.The three circuit structures can perform SET pulse width analysis for different nodes in the circuit system in order to quantitatively calculate the pulse width caused by radiation.The test accuracy and test range can be adjusted by changing the test level,and three structures have different measurement result due to different resolutions,so by integrating the three results and voting,higher measurement accuracy is obtained.By adding the measurement circuit radiation detection module the source of the pulse signal can be determined,and the results that are not affected by radiation can be integrated to achieve higher accuracy and more reliable radiation resistance.3.Optimize the accuracy of radiation-resistant high-precision single event transient measurement circuit under an ideal pulse source.Using Virtuoso simulation tool to build traditional,on-chip self-triggering,radiation-resistant high-precision single event transient measurement circuit under Tsmc N28 standard power supply voltage and accomplish precision comparison simulation.The simulation result shows that:the accuracy of the standard unit radiation-resistant high-precision single event transient measurement circuit is improved by at least 65%and 15%compared to traditional and on-chip self-trigger single event transient measurement circuits with the SET at 50ps,100ps,and 150ps.Then by optimizing the size of the PMOS the accuracy of the three measurement structures is improved by 18%,29%,and 26%,respectively.When measuring SET of 50ps,100ps,and150ps,the accuracy of the custom unit measurement circuit is improved respectively by5%,10%,and 56%compared to the standard unit measurement circuit.Therefore,optimizing device parameters can not only improve the accuracy of a single structure,but also greatly improve the accuracy of the entire radiation-resistant high-precision single event transient measurement circuit.4.Verify the performance of radiation-resistant high-precision single event transient measurement circuit under a non-ideal pulse source.A PWL fault injection model suitable for circuit-level single event effect simulation is constructed and added to the sensitive nodes inside the basic logic gate to obtain the single event sensitivity ranking by simulation.Then select the relatively simpler inverter to build a single event transient target circuit,and perform performance comparison simulations of traditional,on-chip self-triggering and radiation-resistant high-precision single event transient measurement circuits under different SET.The simulation result shows that the accuracy of the radiation-resistant high-precision single event transient measurement circuit is improved by 69%and 26%compared with the traditional and on-chip self-trigger measuement circuits in the worst case.At the same time,the measurement circuit radiation detection module can determine whether the detected pulse signal is the SET to be tested,and when any part circuit is affected by the radiation and cause incorrect results,the other parts can still output correct values,which proves that the proposed measurement circuit in this paper has high accuracy performance and radiation resistance,so it has more engineering application value. |