Nanodevice Charge Sharing Effect Research

Aerospace technology is developing rapidly in our country, there are a growing number of microelectronic devices and integrated circuits systems working in space radiation environment, the single event effect is the main reason that affect the normal operation of electronic systems. With the decrease of the size of the process and be into nanometer era, the effect of electric charge sharing caused by single particle is very serious.The results of charge-sharing in multiple node charge collection, it leds to multiple single event transient and multiple bit upsets, some traditional of the radiation hardened of reinforcement scheme for a single device will lose efficacy with the enhancement of electric charge sharing. Particularly, into the nano-technology, the range of the single-particle radiation in the device is greatly increased, the effect of charge sharing has been unable to ignore, so this paper will conduct a comprehensive study in the following aspects.This paper is based on TSMC 65 nm, and using TCAD Sentaurus software to establish the model and studying the physical mechanism of NMOS and PMOS in charge sharing, by comparison with different size of technology then observe the changes of bipolar amplification effect. Secondly, to observe the change of the electric charge sharing through the different incident conditions, process conditions and layout. At last it will study a SRAM cell turn over again of the basic unit of SRAM, and to prove that the charge sharing is the cause of single event upset recovery, and to study the impact of a SRAM cell turn over again by concentration of P~+ deep well.