Bipolar Device Safe Operating Area, Based On The Electrical Parameters Of The Statistical Analysis

This article on the impact of energy-saving lamps with power transistor device second breakdown of the main factors in a comprehensive analysis and justification, to confirm the device design, process parameters and material selection set design, production factors in the main control device secondary attack The role of wear properties.The role of the device second breakdown of these factors have more analysis and research on the mechanism of the device second breakdown mainly concentrated in the "current focus on theory," and the "theory of avalanche injection", but to improve the device second breakdown The main task is to reduce the current concentration and heat caused because of the current focus on second breakdown and the base open circuit or reverse bias condition, if the collector junction reverse voltage increasing space charge electric field strength has been increasing in accordance with the base region expansion theory, the collector junction space-charge effect of strong electric field in the second avalanche breakdown, so the impact of this factor on the second breakdown experiments, research, and improve Zhu Yao from the device design, material selection, process parameter settings and other aspects of to improve the focus on the problems and improve the current issue of avalanche injection, in combination with previous studies based on the analysis of theoretical principles and actual production of the experimental data, and comparing the differences between a theoretical analysis, confirmed that the device design, manufacturing process second breakdown in the device and the main factors affecting the mechanism for follow-up to improve enhance the device to provide the basis of theory and data.