The Analysis And Research Of Thermal Characteristics Of High-power Semiconductor Laser Packaging

Semiconductor laser has a lot of features, such as small volume, long lifetime and low threshold current, and it is easy to be integrated with a variety of photoelectronic devices. Many advantages make it widely used in civil, medical, industrial and military fields. But with the improvement of output power of semiconductor laser, the problem of waste heat is increasingly serious, leading to many negative effects. For example, the temperature of active region is gone up, the electro-optical conversion efficiency is gone down, and the lasing wavelength is shifted to red. So the research on the thermal characteristics of semiconductor laser is always an important issue.From manufacture craft and theory of thermal characteristics of semiconductor laser, This paper aimed at808nm wavelength single-chip semiconductor laser, using ANSYS software to analysis the relation of the temperature of active region of chip and the dimensions of packaging heat sink in steady-state, obtaining the variable regularity of temperature of packaging chip in different parameters of heat sink.Under the guidance of the conclusion about thermal characteristics of single-chip semiconductor laser, based on changing the size of heat sink, a multi-chip hundred-watt semiconductor laser packaged with stepped heat sink in ladder form was analyzed in steady-state by ANSYS, obtaining the rule curves of temperature of active region of chip packaged with the highest and the lowest Cu heat sink. What is more, the change regularities of the temperature difference and temperature rise by thermal coupling were derived.Finally, the heat-dissipation structures of semiconductor laser packaged with single-chip and multi-chip were designed and optimized, putting forward new heat sink packaging project. The thermal characteristics in transient-state of two structures of hundred-watt semiconductor laser packaged with multi-chip was necessarily analyzed.