Study On 1450nm High Power Semiconductor Laser Array

Semiconductor lasers operating in 1450nm can be used in the systems of laser measure,medical,short-range communication etc.High power laser diode arrays have a important role in the development of national economy because of it's high output power,long lifetime,high transfer efficiency,small volume.In addition semiconductor lasers operating in 1450nm hurt less to skin and is the more secure to eyes.But this kind of semiconductor lasers still remain to be improved in such parameters as output power and reliability. Dealing with the problems relating these parameters are main efforts of the author.At present they are research hot spot fieds of laser technology.In this paper,the different structure designs and packages taking account for heat,dissipation of Al-free high power laser diode arrays were studied,and some achievements are listed as below:The Transition Energy of Ga_xIni_1-xAs/In_0.80Ga_0.20As_0.44P_0.56/ InP quantum well structures was calculated by using 4×4 Luttinger-Kohn Hamiltonian matrix under effective mass frame. The variation of transition with Ga composition x and well width L_w is presented.The linear arrays of high power laser diode with novel italic surface passive heat sink cooling is designed and fabricated according to heat dissipation,which obtain better temperature characteristics compare to that of typical structure,and realizing the package of high stabilization,high reliability,high power laser diode linear arrays.