Damage Research On The Long Pulsed Laser Irradiation Of Silicon

Intense laser is usually divided into high energy laser and high power laser, which have been studied for a long time. Long pulsed laser has higher power, and silicon is an important infrared window material, so it is a main component of many detectors. There may be damages when the laser is used in conjunction with detectors. Therefore, it is important to explore the process of damage. Our central works are obtained as follows:1. Besides the reviews on the present domestic and overseas research status of laser-matter interaction, the basic analysis on the definition and classification of material damage induced by laser is briefly discussed in this paper.2. The effect on material damaged induced by laser parameters and absorption of material are analyzed. Some kinds of different mechanisms of damage induced by laser are introduced, focusing on the semiconductor light absorption mechanism3. The paper makes some simple introduction to the model of material induced by laser on the basis of the thermal conduction theory. The theory of temperature and stress field is analyzed. According to the classical equation of heat conduction to the basic principles, if the material is isotropic and the thermal parameters are constant before and after the process, the numerical value imitates the temperature field when the long pulsed laser irradiate silicon material by matlab. The results show that the temperature rise zone is within the laser irradiating zone, the temperature rise zone is enlarged according to the increase of laser energy and irradiating time. The temperature rise zone decreased along with stretching of the radial and axial direction.4. The results of numerical simulation on the thermal stress field.when the long pulsed laser radiates the target material demonstrate that the circumferential of thermal stress plays a main role in damage mechanism of material. Stress is enlarged with the increase of irradiating time. Thermal stress that the material is subjected to will decrease with increasing of laser radium under the circumstances that the laser energy and the pulse width and other parameters are the same.