Otp Memory Sensitive Amplifier Design Technology Research

One-time programmable (OTP) memory as one of the microelectronics family attracts much attention. Following enhanced process technology, as the feature size of device decreases, the storage ability of OTP increases continually, and at the same time, its performance has improved dramatically. In this thesis, from the point of view to improve the yield of memory chip, on the basis of studying the structure and working principle of OTP memory, combined with circuit simulation tool-Spectre, we study design techniques of the sense amplifier as the key module of OTP memory.The most important design issue of the sense amplifier (referred to as SA) is the tradeoff among yield, speed and area. Through theoretical analysis and Spectre simulation, this paper compares the SA circuit performance of four structures-inverter type, latch-up type, current-mirror type and the improved op amp type, and optimizes circuits by changing the device size and type. The inverter and the latch-up type is simple, small size, relatively dependent on the process stability. The current-mirror type does not depend on the process stability, the resistance threshold Rcriticai is high and can read out the stored information exactly and fast, but is susceptible to interference. The improved op amp type has all the advantages mentioned above, but the drawback is that the area occupied. So in different processes, according to the special requirements of the memory performance, you can choose different types of SA circuit.The project finally designs the layout of the different structures of the SA and the overall layout of OTP memory, and the layout passes the DRC and LVS rule checking.