High-density Resistance-change Memory Design

In this paper, we investigate into the design of RRAM (Resistive Random Access Memory) in the quest for high density solutions. The design of the key peripheral circuit including sense amplifier and write driver is firstly presented in the paper. Then this paper reveals two 3D multi-layer high density structure:NOR type 1TXR structure and NAND type 1TXR structure. The read and write algorithms of the two structure are proposed respectively to promise the reliable work of the two structure. Thanks to the two structures this paper proposed, the storage density can be 280% and 500% higher than the traditional 1T1R structure.