The Circuit Design And Implementation Of The Sense Amplifier In Nano-Crystal Memory

With development of the SOC technology represented by industrial control and consumptive multimedia electronics devices, as an important part of SOC, embedded Flash Memories has gained enormous marketing demand. The trend of scaling down of IC feature size day by day leads to inevitability of developing Flash Memories technology of next generation. Nano-Crystal Memory(NCM) emerged during the period of transition of generations. Moreover, in order to reduce power dissipation, the supply voltage of SOC has been reduced recently, which gives rise to a bunch of technical problems for high speed low voltage embedded Flash Memories. As a result, considering the advantages of NCM, the peripheral circuitry's performance is of great significance.Firstly, the thesis gives brief introduction to NCM systems and points out the difference between NCM and traditional Flash Memories. The principle and method of PROGRAME, ERASE and READ operations has been specifically illustrated, and the thesis proposes the proper NCM array structure.Secondly, the thesis addresses mainly on NCM systems and circuitry. According to the electrical characteristics of array cells, the system has been divided into two parts, which are DATA PATH and PROGRAM&ERASE PATH. Important modules are assigned for both paths and the specification parameters of these modules have been specified. Based on the specification, the modules of the memory system have been designed and the simulation results are also exhibited.Lastly, on consideration of embedded NCM devices itself and the devices used in peripheral circuitry, problems encountered during layout floor planning and routing has been researched and solutions has been proposed.Based on GSMC 0.13μm triple metal NCM process and standard 0.13μm CMOS embedded flash process, an 8Mbits low-power high-speed embedded NCM system has been designed. With the function of programming by BYTE, reading by BYTE and erasing by SECTOR, the system's access time, program time and sector erasing time are less than 100ns, 10ms and 10ms, respectively.