Design Of PA Based On RF CMOS Process

The radio frequency(RF)integrated circuit is the design bottleneck of the WLAN systems. TheIC technology for RF circuits continues to change. Performance, cost and time to market are threecritical factors influencing the choice of technologies in the competitive RF industry. Supported bythe enormous momentum of the digital market, CMOS devices have achieved high transitfrequencies. In the resent years, RF CMOS has suddenly become the topic of active research. Thispaper presents the design of Power Amplifier, at present, must of radio frequency systems can beachieved single chip integration based on CMOS technology, but realizing power amplifier byCMOS technology is different, so it’s become a higher integration trend.This paper design a 2.4GHz CMOS power amplifier (PA) was designed based on SMIC’s 0.18μm RF-CMOS technology, and simulation results were presented. A two-stage amplifier structure isproposed. In order to improve linearity, the self-bias cascode structure with self-adjust structure isutilized to the drive stage to make the bias voltage change with input signal power. So that thelinearity increases and PAE are improved as well. The power stage uses CMOS with commonsource to get large output power. The measured results show that the proposed PA has a power gainof 25dB, P1dB of 22dBm and a power added efficiency (PAE) of 37% at 2.4V supply voltage.This paper also design a 5.8GHz CMOS power amplifier (PA) was designed based on TSMC’s0.18μm RF-CMOS technology, and simulation results were presented.