The Heat Transfer Research On A Power Module

The High-power IGBT module is a module which can achieve a large number of specific functions, which is combined with the IGBT chips and the fast recovery diodes and other discrete components in use of the Integrated Power Electronic Technology, and which is encapsulated by different processes; Nowadays, IGBT power modules have been widely used in electronic information, transportation, high-end aerospace and other industrial direction. The highly integrated performance of the power module makes it use more convenient and practical, expands the broader applications, helps the combination of power parameters and control methods, and enhances the flexibility of the power electronics applications.The development of the power module has achieved great results in terms of performance, integration, reliability aspects, as the market demand for the quality and quantity of the IGBT power modules increasing. The integration will enhance and achieve more powerful, the resulting heat dissipation problems will become increasingly apparent. The module size reduction will inevitably lead to its problems in the heat transfer process. Heat transfer problem has an impact on prospects for the development of IGBT power modules and has become a pressing problem. The heat transfer research of the high power IGBT module will help solve the problem of heat transfer, achieve a high degree of integration and improve the value of its application.In this paper, the heat transfer in the High power module has been studied using ANSYS, and calculate the temperature of the IGBT chips, and build an experimental platform to measure the different temperatures in different location of power module, and compare with the finite element analysis results finding good agreement between the two. Sum up the distribution of the power module's internal structure and the devices in the process of the finite element analysis and the experimental verification, and combine the heat transfer rules, propose some optimization methods for the IGBT power module internal part of the structure and size parameters, and make a theoretical argument.