Analysis Of High Power Modules Based On ANSYS

So far, the so-called high-power module definition is will power electronic power device according to certain function combination and through Filling the rubber seal, formation module. And with optimal circuit topology structure as the basic principle, forming arbitrary combination or replace the standard module, thus fundamentally solve the module seal structure, module with internal chip and its interconnect substrates way, select type of packaging. Vegetation technology process many issues, make the system of various components between interconnection generated due to minimize harmful parasitic parameters, make high-power device of heat more easily to outside send out, make it more sustainable environmental shocks has greater current carrying capacity, entire product performance, reliability, power density improved, and thus meet more industry demand. At present the main problem that the high power integration technology is faced with is how to make volume of module smaller, cheaper and more density of power, better capability of cooling, less parasitical parameter and applied in more situations. One of the main problems is the cooling of power module. The power apparatus as high voltage apparatus is the main thermal source in integrated module. So when the cooling of power apparatus is solved, the whole cooling problem of power module is solved too.In this article, the high-power IGBT module package as the research object. Through uses the ANSYS software to realize the modeling and simulation, and established the power module part of the main heat simulation. According to this hot model analysis evaluation module thermal properties. And to the copper foundation plate size, DBC ceramics thickness and so on several key parameters has carried on the optimization design. From the result of optimization comparison can see, when the ambient condition is certainly, each key parameter rational design, will be the module encrustation thermal resistance achieves is smallest. And then combining with thermal analysis results are coupling stress analysis and observation of the device failure point of maximum location and size, so as to provide a theory basis for future effectiveness analysis.