.65 Nm, Metal Trench Etch Process Development

By the development of semiconductor industry,we are now going to the period of Cu/Low k interconnection.The requirement of reliability,yield and electrical property are becoming much stricter also.It' s a challenge of semiconductor manufacturing,especially to the metal trench etch process.To develop a 65nm Dual Damascene metal trench RIE process which can meet all the reliability/yield/electrical requirements,the author import new equipment/gas to improve the RIE LAG;Studied the TDDB life time theory,improved TDDB by make a good trench profile and CD uniformity; Solved the issue that the kelvinvia' sresistance high by the adjustment of CO₂ flow;Using plasma de-chuck to avoid arcing.Finally,the author got a strong process and can meet the criteria of reliability,yield and electrical property.