Solutions Based On High-density Applications In Resistive Memory Technology

As the feature size scaling down,the Flash nonvolatile technology comes up against the challenge of limited-size.Both phase change memory based on chalcogenide and resistive random access memory based on metal oxide are regarded as candidates of next generation nonvolatile memory because of own characteristic merits respectively.At the same time,it is the concentrated research point that how to actualize two kinds of two-terminal resistance-memory into high density application.Aimed at this instance,the thesis proposes high-density application schemes for PCM and ReRAM from the view of process,and these schemes are proved by experiments.The research focuses on memory device and select element.On the hand of memory device,for phase change memory,the 3D structure of phase change memory firstly formed by dielectric's electric breakdown which is non-depend on lithography technology,that provide possibility of multi-layer manufacturing and of eventual high-density application.For resistive random access memory,characteristics and mechanism of CuxO resistive memory were mainly researched,and the corresponding solution for back-end process integration was put forward.On the other hand of select element,the 1TxRxD select technology was firstly put forward for high-density and low leakage current.Based on the p-type semiconductor characteristic for phase-change materials and CuxO,we had manufactured the heterojunction diode by storage materials.The heterojunction diode was used in 1TxRxD structure as the select element.Multi-layer manufacturing in process view is the greatest same point for above said schemes, which provides process solution for two-terminal resistance-memory's high density application.This paper consists of 6 chapters.Chapter 1 is the introduction of new type nonvolatile memory.Chapter 2 depicts the mechanism and structure's development of phase change memory, and mechanism of breakdown,finally provides the scheme of electric-manufacturing in detail.The CuxO resistive memory and its process integration scheme is studied in Chapter 3.Chapter 4 is the selected element technology for resistance-memory's high density application.The scheme of 1TxDxR is firstly proposed,and then heterojunction diodes based phased change materials are successfully fabricated.Heterojunction diode based on phase change materials and heterojunction diode based on metal oxide are respectively used in 1TxDxR structure for high density application. Conclusions and outlooks are made in Chapter 5.