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Ka-band Full-band Low Noise Amplifier Is Developed

Posted on:2006-08-22Degree:MasterType:Thesis
Country:ChinaCandidate:X H TongFull Text:PDF
GTID:2208360152497455Subject:Radio Physics
Abstract/Summary:PDF Full Text Request
The noise figure of a microwave and millimeter-wave systems basicallylie on the noise of a front amplifier, so the Low Noise Amplifier (LNA)play critical roles for the receiving system. The LNA designed is baseon wide band millimeter-wave Microwave Monolithic Integrated Circuit(MMIC) that can be bought from overseas, and magnitude equalizer is usedto amend gain flatness of the LNA. The characteristic of the LNA designedand manufactured is—frequency range: 26500-40000MHz, gain: G= 30dB, gainflatness: ?G<5dB, noise figure: N_f <4.5dB, VSWR: S<2.2, P-1out>4.5 .This thesis mainly expresses design of waveguide-to-microstrip probetransition, millimeter-wave magnitude equalizer and millimeter-wave LNA.Above all, this paper presents the design of waveguide-to-microstripprobe transition in Ka-band. The transition have low insertion loss infull Ka-band .Secondly, designing methods for a microstrip power equalizer areanalyzed. With the method, a 26.5-40GHz millimeter-wave microstrippower equalizer is designed for the first time in China.Finally, after expounding the millimeter-wave LNA devices, basictheory and framework design, we, according to the project specification,have designed and manufactured the Ka-band LNA component and, measuredits electronic performances. Furthermore, we have concluded from it andpresented improved measures.
Keywords/Search Tags:Millimeter-Wave (MMW), Low Noise Amplifier (LNA), Magnitude Equalizer, Probe Transitions, Microstrip
PDF Full Text Request
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