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Millimeter-wave Device Modeling And Design Of The Low Noise Amplifier

Posted on:2011-07-29Degree:MasterType:Thesis
Country:ChinaCandidate:T F ZhangFull Text:PDF
GTID:2178330332960699Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In recent years, designing and realizing millimeter-wave integrated circuit with high performance and low cost has been becoming the hotspot in the domain of academia and industry. Based on that, the millimeter-wave device modeling is studied and a millimeter-wave CMOS LNA is designed in this paper.First of all, we analyse the geometry characteristics of the coplanar-waveguide transmission line with HFSS, in order to understand the influences of the different geometry strctures on the characteristic parameters, for instance, characteristic impedance,quality factor, attenuation constant, and so on. Besides, the model of the coplanar-waveguide transmission line available to millimeter wave is conceived with ADS transmission line model card and ADS optimization ActiveX.And then, In the next place, a small-signal model of MOS field effect transistor (MOSFET),which is applicable to millimeter wave, is analysed and improved on, and the related parameter extraction methods are proposed in this paper. This model carefully considers the high frequency parasitic effect, Kinds of the high frequency parasitic effects is fully taken into account in the model. And on the basis of the analysis, the parameter extraction methods of external lead-wire inductance, external parasitic resistance and part of intrinsic components are improved. The validation using 2-D Silvaco device simulation data shows that the model is capable to predict the performances of NMOSFET at high frequency ranging from 50 MHz to 60 GHz.Finally, a 60GHz low noise amplifier(LNA) is designed. TSMC 0.13um standard CMOS technique and coplanar-waveguide transmission line model,which is above mentioned, is utilized by the amplifier.Three-cascade structure,is adopted in this circuit in order to achieve enough power multiples. Meanwhile, noise reduction technique and current reused technique are also utilized to improve the circuit performance. The LNA achieved NF=5.7dB, Power gain=17.9dB. The layout of the LNA is designed by Cadence virtuoso.
Keywords/Search Tags:Millimeter Wave, Coplanar Waveguide Transimission Line, MOS Field Effect Transistor, Small Signal Model, Low Noise Amplifier
PDF Full Text Request
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