Design Of Silicon-based Millimeter Wave Power Amplifier And Low Noise Amplifier

With the increasing degree of economic globalization and social information,the requirements for data transmission rates in wireless communications are increasing.According to the channel capacity and Shannon’s theorem,the transmission bandwidth of the wireless communication system is proportional to the transmission rate.The electromagnetic wave in the millimeter-wave band has the characteristics of wide bandwidth and rich spectrum resources available.Therefore,more and more researchers at home and abroad have invested in the research work of wireless communication systems in the millimeter band.In recent years,the update and development of CMOS technology has provided the basis for the research of silicon-based millimeter-wave integrated circuits and the feature size of CMOS technology is continuously reduced.The cutoff frequency F_T of active devices has reached 300 GHz and the maximum oscillation frequency F_max has reached more than500 GHz.Power amplifiers and low noise amplifiers based on low-cost CMOS processes in millimeter-wave RF front-end transceiver links are the main research objects of this paper.Firstly,the research background and significance of silicon-based millimeter-wave integrated circuits（MMIC）are analyzed.Some research results and circuit structures used in 60GHz power amplifiers and Ka-band low-noise amplifiers at home and abroad in recent years are investigated.Finally,the circuit structure of the 60GHz power amplifier and the Ka-band low noise amplifier is designed and used EDA software for circuit simulation in this paper.The main research contents and results of this paper are as follows.（1）The influence of the characteristic frequency FT,the highest oscillation frequency Fmax and the minimum noise figure NFmin of active devices in CMOS technology on the design performance of millimeter-wave integrated circuits is studied in this paper.The equivalent circuit of passive components in CMOS technology is proposed and analyzed.It includes the layout of inductors,capacitors,on-chip transformers and their transmission lines and high-frequency small signals.Among them,electromagnetic simulation of passive components such as inductors,on-chip transformers and their transmission lines is required in the millimeter-wave integrated circuit design process.The electromagnetic simulation software used in this paper is Momentum.The simulation software is a 2.5D planar electromagnetic simulator based on the moment method.（2）A CMOS-based 60GHz high-gain power amplifier with a three-stage differential structure was proposed in this paper.The first stage of the power amplifier uses a cascode structure with high gain and high reverse isolation.Both the second stage and the third stage of the power amplifier use a capacitor neutralization common source structure with high gain,high isolation and high output power.There is an on-chip transformer structure is adopted between the stages and the input/output terminals.Based on post-simulation results,the 60 GHz power amplifier can provide26 dB of gain(G_ain),16 dBm of saturated output power(P_sat)and 18.6%of additional efficiency（PAE）for good overall performance.（3）A CMOS-based Ka-band low-noise amplifier with a first-order differential structure with a one-stage differential structure was proposed in this paper.The circuit structure adopts a cascode structure with negative feedback which has the advantages of high gain,wide bandwidth,low noise and good stability.The input stage uses a low-noise impedance point LC matching method and the output stage uses a high-gain impedance point LC matching method.According to the post-simulation results,the Ka-band low noise amplifier can provide 3.5 dB of noise figure（NF）,8 dB or more of gain(G_ain),1 dBm of output 1 dB compression point(P_1dB),6 GHz of bandwidth and±0.5 dB of flatness for good overall performance.