| With the rapid development and technological innovation of mobile communication technology,the demand of transmission rate,delay and stability in wireless communication is also increasing.Millimeter wave band has been widely studied and explored due to the advantages of short wavelength,high resolution and abundant frequency spectrum resources.In millimeter wave systems,the low-noise amplifier affects the sensitivity,dynamic range and noise performance of the receiver system.And the frequency multiplier can effectively expand the frequency of the local oscillator in the transceiver system.In the thesis,one high output power doubler and two low noise amplifiers are designed based on Si Ge and Ga As process separately.In the thesis,a 96-110 GHz high output power frequency doubler is designed based on130 nm Si Ge process.The frequency doubler adopts a balanced structure.In order to ensure its odd wave signal suppression characteristics,a balun with amplitude imbalance of 0.6d B and phase imbalance of 4 degrees is designed.And it can suppress the fundamental and third harmonic signals in the output signal.After de-embedding,the output power of the frequency multiplier is up to 9.3d Bm@103GHz with a 3d B-bandwidth of 14GHz(from 96 GHz to110GHz).And the relative bandwidth is 13.6%.The chip size is 0.54mm×0.4mm while the measured and simulated results are in good agreement.And two low noise amplifiers are also designed based on Si Ge and Ga As process separately.The first one is an E-band broadband low noise amplifier based on 0.1μm Ga As process.The amplifier adopts a four-stage common source structure.And the LC matching circuits composed of microstrip lines and capacitors are used for input,output matching and inter stage matching.Peak staggering matching is used in optimizing the matching networks to trade off the performance between gain,bandwidth and noise figure.According to the measured results,the amplifier shows a maximum gain of 23.8d B@63GHz and a gain flatness of 2.9d B.The 3d B-bandwidth of the low noise amplifier is 57GHz-91.5GHz with a 46%relative bandwidth.The simulated noise figure of the amplifier is 3.5-4.0d B.And the measured results meet the design requirements.The second low noise amplifier is a 220 GHz low noise amplifier based on 130 nm Si Ge process.This low noise amplifier is composed of one stage cascode structure and two stage differential cascode structures.The transformer balun is mainly used in the first inter-stage matching network and the output matching network while other matching networks are composed of capacitors and microstrip lines.The simulated results show a peak gain of 16.5d B @ 218 GHz.The 3d B-bandwidth is about 25GHz(from 205.5GHz to 230.5GHz)with an 11.5% relative bandwidth and the noise figure is11.7-13.2d B. |
