| In the front of wireless system, radio-frequency and microwave low noise amplifier (LNA) is the important component, which character determined the SNR and the performance of whole receiver. In this paper, a detailed overview of MMIC low noise amplifier is described and recent achievements of millimeter-wave LNA based on CMOS are reported. Some suggestions for developing the next generation millimeter-wave LNA based on CMOS are given.For the Integrated Circuit design nowadays, the Computer Aided Simulation has been an indispensable tool. The Circuit Simulator is a design tool for IC at a relatively low level. It can provide most detailed simulation result of the circuit. If the Circuit Simulator can be used for IC design and analysis depends on device model, especially the accuracy and simplicity of the model, which would influence the accuracy and speed of the simulation. With the device dimension decreasing, the complexity of the device model increases obviously. Generally speaking, the more complex the model is, the more accurate it will be, and the more model parameter it needs.The main work in this paper:1. This paper chooses BSIM3 (Berkeley short-channel IGFET model) the model tobe extracted, which is for short channel MOS Field Effect transistor specially. The features of BSIM3 model is discussed in this paper firstly. Then, this paper extracted the model parameters of IBM 0.13um CMOS process and make the RF model using subcircuite for the process.2. Based on 0.13um CMOS process, design a chip of V band MMIC LNA is another task of this thesis. The LNA choose the cascade structure to minish the noise figure and improve the gain. Then, the thesis discuss performance of cascade LNA in details. Lastly, the designed LNA will be used in 60GHz, the gain is 14.9dB, the return loss less than -10dB,DC power is 37.5 mW and noise figure is 6.7 dB. The designed LNA meets then anticipate targets and it will help to the development of millimeter wave CMOS circuit in our country. |
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