RF Mosfet Modeling For 0.13μm CMOS Technology

The rapid progress in the wireless communication has induced a great market demand for radio frequency integration circuits (RF ICs). With the continuous scaling of CMOS technology, the cutoff frequency of MOSFET has exceeded 100GHz, which makes the CMOS technology a good candidate for the realization of RFICs. With the advantage of low cost, high level of integration, low power and ease of integration in system-on-chip (SOC), there are many CMOS RF IC emerged in the past several years.However, it is still very challenging to design RF IC in CMOS technology. One of the major barriers is the lack of good model for RF application. To reduce the design period and the time-to-market of CMOS RF IC, it is necessary to provide accurate model for RF IC designers.Also, RF MOSFET modeling in 0.13μm CMOS technology is not mature, especially the models for RF application. This thesis will carry out the investigation on RF application MOSFET modeling in 0.13μm CMOS technology.First, the background of our research is introduced, including the history of MOSFET model, the trends and requirements of the MOSFET models. Also, the flow for the model development is summaried. Second, a brief introduction for MOS devices is presented, and the scaling effect on device performance is analyzed. Next, the design of optimized layout for RF MOSFETs in 0.13μm CMOS technology and the characterization of these transistors is accomplished. Finally, accurate small signal modeling for these RF MOSFET is implemented with an equivalent circuit model and an improved approach for parameter extraction of the model is proposed and verified with the measured data.