Deposition Of Nanograin Polycrystalline Silicon Thin Films And Its Structural Characterization By Hot-Wall LPCVD

Nanograin polycrystalline silicon films have been successfully deposited on SiO2 surface by LPCVD and post-annealing methods. The growth rate and microstructures of as-deposited and annealed films are demonstrated by scanning electronic microscopy (SEM), atomic force microscopy (AFM), Raman scattering spectroscopy and α-step. Solid phase crystallization (SPC) of B-doping α? Si films and their conductant properties also are discussed. The results show that the nanograin poly-Si films can be formed by LPCVD, and the size of nanograin can be successfully controlled by varying the experimental conditions. In addition, lower annealing temperature and shorter annealing time can improve the uniformity of nanograin size and density distributions. The grain size of heavy doping films were increased with increasing the annealing temperature and time, but the conductance is always saturated, which is due to the fact that the solubility and activation of B in poly-Si are limited.