Research Of CMOS IC Radiation Hardened Process

With the development of modern science technology, the computers and control parts with the ability of handle high-speed signal and strong radiation resistant have become the core of communication satellite, weather satellite, aircraft and modern weapon etc. So that, the key of electronics information industry and national defense is to develop high-speed strong radiation resistant integrated circuit technology.At present, in the manufacturing of IC slice, body-silicon CMOS process technology still occupy predominate position, so it is necessary to harden research CMOS IC. Because the Radiation Resistant and Hardened Technology (RRHT) belong to the military technology, it is a secret. So we must study RRHT by ourselves based on basic techniques.The circuits used for space technology, will be affected by various rays, can generate ionizing radiation effect and single-event effect. It is mainly tells ionizing radiation effect and radiation resistant technology, on CMOS circuit in the first part, include boundary surface state and induced trap charge of radiation; separately introduce gate oxidation layer hardness, source/drain hardness, passivation layer hardness, field areas hardness and the influence of high temperature after gate oxidation.The second part mainly tells single event effect. The single event effect model is first tells include charge collect model, particle diffiuence model and charge's transverse transfer model. Then damage effect is tells that caused by high energy particles. Then it is describes that the single event effect of CMOS IC. Then it is tells that the way of how to protect CMOS circuit using methods of design and process. The last it is also introduce development of radiation hardened IC 80C86 CPU. The anti-ionizing-radiation-effect and anti-single-event-effect achieve good result.