Research On Ionizing Radiation Of MOS-gated Thyristor

Among power devices, the thyristor has near-perfect on-state voltage and the MOSFET has ideal control ability. Aiming at improving the reliability of MGTs applied in radiation environment, the paper investigated on the ionizing response of MCT and BRT, which are attached to the MGTs. The main effect cause by single-event was determined and the corresponding harden methods was presented with verification of TCAD simulation.Firstly, this paper established a way to obtain the parameters of incidence particle and import them into TCAD software: the main particle in ERBs was identified to be proton, the energy and flux range was acquired with simulation and the LET and range was obtained with different incidence energy. What’s more, SEE and TID were confirmed to be the main radiation effect in ERBs.Secondly, the general method of designing a MGT of expected blocking voltage with low power dissipation was presented. A MCT, with blocking voltage over 1400 V, on-state current density over 24kA/cm-2(@10V), turn-off time less than 10μs, and a BRT, with blocking voltage over 1400 V, on-state current density over 25.6kA/cm-2(@10V), turn-off time less than 2μs are realized. The layout design, tape-out and test of MCT were accomplished.Finally, the Ionizing effect of designed devices was taken into account. It was showed that blocking state is the most sensitive to SEE. Then, the re-distribution process of carriers was described comprehensively, which figured out that latch-up is the primary single-event effect, and the harden methods was proposed from the aspects of applied circuit and structure parameters. Finally, it was showed that JTT was sensitive to TID and some harden methods was proposed and verified by TCAD simulation.