Research On SOI Based On TDI And SEU Effect

With the rapid development of aerospace and military industry,the importance of high reliable electron components and IC becomes more prominent as well as the radiation-harden design.SOI(silicon on insulator)technology as one of the significant direction of Moore Law to continue,has a huge advantage in radiation-hardened design when it was invented.This paper mainly focus on how the total ionizing dose effect and single event effect influence the performance of SOI device,and providing theoretical study for radiation-hardened IC design.More details about this paper are as follows:Based on Synopsys' Sentaurus TCAD tool,we first build a 130 nm bulk silicon NMOS model according the TSMC 130 nm CMOS Logic library used in our project.Then based on this device model,we build SOI device model for our research.Depending on channel's depletion condition,SOI devices can be divided into two kinds – FD(fully depleted SOI)and PD(partially depleted SOI).For PD SOI device,BTS(body tied source)and H-gate structures are adopted to restrain the Kink effect.On the basis of total ionizing dose effect research,fixed charge model is used to model the total ionizing dose effect.Based on this model,we simulate the total ionizing dose effect on SOI device.The results of numerical simulation show a clear conclusion.When using the same structure of source/drain,the leakage current of SOI devices has an obvious increase after total ionizing dose effect.Meanwhile the trans conductance has a noticeable degradation as well as threshold voltage.More specifically,the FD SOI device has a worst device performance than PD SOI.For PD SOI device,H-gate structure can restrain the Kink effect,at the same time it also can improve the performance after total ionizing dose effect.To a certain extent,the BTS structure can also improve device's property.At last,using the radiation model in Sentaurus to model the single event effect,we study the process when a heavy ion penetrates different device structures.There are various factors which can influence the single event effect,including the location where the heavy ion penetrates the device,heavy ion's incident angle,the voltage of drain contact,the different structure to tie body to ground,even the influence of total ionizing dose effect.Through the numerical simulation,make a further research on funnel model.Results show that,compared with bulk silicon device,the SOI device has a correspondingly lower drain leakage current and collected charge.Especially for the FD SOI device,this device has the best device performance after single event effect.In IC application,considering the complexity of the space radiation,total ionizing dose effect and single event effect both should be considered during design.The numerical simulation shows that the SOI inverter has a smaller chance to upset the circuit logic than bulk silicon inverter.More details,the FD SOI inverter has the best performance faced with total ionizing dose effect and single event effect,as for PD SOI inverters,the H-gate PD SOI inverter performs better than other PD SOI inverters.