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High Performance Low-Light-Level Device Al2O3 Ion Barrier Film And The Analysis On Characteristics

Posted on:2007-04-01Degree:MasterType:Thesis
Country:ChinaCandidate:W B SangFull Text:PDF
GTID:2178360185463891Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The essence of the high performance low-light-level device Al2O3 film is one ultra thin continual film, it was made on the input surface of the MCP, and the MCP is the essential component in the Third-generation image intensifier. The film can stop the ion feedback effectively and it is very important to lengthen the life of the image tube.This paper introduced the photoelectricity imagery technology and the MCP technology development survey simply, and discussed mechanism on ion feedback and the effects to the image and the life of the tube, elaborated the mechanisms on electron penetration and ion stopping.In the study of the process on ion barrier film, the mechanicsm of the carbon pollution and some technical problems in the traditional process were nanlysed, also, the new process plan without pollution was proposed. We have tested the performance of the MCP with ion barrier film which was made in new process and. Moreover, we studied the changes of the performance on MCP before and after it was baked, for the life of the tube and the MCP we also have made several initinal attempts. We also made several further studies on electron penetration and ion stopping through the experiment and theory analysis.
Keywords/Search Tags:micro-channel plate, ion barrier film, UV photo-electricity method, ion feedback
PDF Full Text Request
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