The Study Of Hot Carrier Injection Effect In Sub-Micron MOS Devices

One of the most critical problems facing the aggressive downscaling of CMOS transistors is the reliability due to hot-carrier effects. This thesis attempts to provide accurate reliability characterization and deep understanding of the hot-carrier degradation mechanism of Sub-Micron MOS. Carrier degradation mainly due to electron and hole capture and interface states generated. Hot carrier degradation process is very complex, and depends on the stress conditions, device structure, gate oxide quality.We introduced hot carrier effect MOSFET current research and measurement techniques in recent years, Summarizes the device will encounter four types of hot carrier, also discussed the relations between generation and injection of channel hot carriers and three kinds of main bias conditions : the high voltage , the medium voltage and the low voltage are investigated . Further study for interface traps and oxide charge generation mechanism.Processing technology for the increase from the hot carrier injection effect, Improve the gate oxide layer from the charge and reduce the transverse electric field should follow two ways: First, they use technology to improve gate oxide quality of gate oxide, another is the use of LDD process to reduce the transverse electric field. Experimental results show that incorporation of oxidized nitrogen thermal annealing can effectively reduce the hot carrier injection effects, LDD structure of two ways to suppress hot carrier effect: Weaken the drain side electric field and makes the maximum electric field away from the drain-side gate...