The Reliability Study For Oxide Integrity

After the first IC was fabricated, the IC reliability researching is developing all the time. With the device channel length become more and more short, the IC's inte-gration level and quality is improved, such that the IC reliability is stand out increas-ingly. Currently, the oxide breakdown is the major issue of IC reliability. Oxidation process is used in semiconductor industry's FEOL and BEOL. Normally, the dry ox-ide's quality is better than wet oxide, so dry oxide process is used for gate oxide, and wet oxide process is used for ILD and IMD. It is necessary to focus on oxide fabri-cating process due to the oxide breakdown will induce IC failure. So studying the process effects for improving oxide quality will provide solutions for industry. It also has benefit to improve the process capability for semiconductor industry.This paper fan out the fabrication process effect on oxide, detail descried the method for improving the oxide quality. In addition, it summarized the reliability test methodology, failure mode and etc.In the experimental part, the dissertation presented the influencing factors from different process, such as furnace and wet clean. And provide the method to improve oxide quality from process point of view. The improvement methods have applied in manufacture and gain the benefit already.