Research On Low Voltage LowPower Novel Flash Memory Circuits For Embedded System Applications

In this dissertation, a novel low power, low current and high access speed 128KB Flash memory for embedded system applications is firstly introduced, which uses the Source Induced Band-to-Band Tunneling Hot Electron (SIBE) injection to perform programming. Based on the cell structure, the operation modes, the programming characteristics and read characteristics, the system and array architecture of SIBE Flash memory is proposed. In addition, novel high performance read path and high speed page program path used in SIBE Flash are originally illustrated. Circuits design also include the bandgap voltage reference module, high voltage generation and management module. Furthermore, a high speed erase algorism is studied based on the self-convergence mechanism in SIBE Flash. At last, the layout of macro cell circuits is analyzed and completed by full custom method. The results show that the proposed 128KB SIBE Flash memory features low voltage, low power, high programming speed, high access speed, and has a wide range of applications in the embedded system applications.