| In this study, high quality P -SiC film is grown on Si (100) by PECVD method at the substrate temperature of 400?00 癈. The effects of growth parameters on the composition and structure of P -SiC film are studied. The optimal condition for P -SiC film growth is found and nanocrystalline P -SiC film is prepared under suitable condition.For the first time, diamond film is grown on TiSi2 surface coated on Si substrate using HFCVD method. It is demonstrated that in the same condition, (001) textured diamond nuclei can be formed on Si and TiSi2 surface, however, when diamond film is grown on Si substrate, the (100) facet has a high growth rate, while as for the case of TiSi2 substrate, the (111) facet of diamond grows faster than the (100) facet so that the (111) facet of diamond will spread and (100) surfaces will decline. Field electron-emission experiment shows that the diamond film grown on TiSi2 owns preferable emission character than that grown on Si. XPS of the films indicates that TiSi2 interlayer can prevent the interaction between substrate material and diamond interface, so that the adhesion of diamond film is improved. When substrate temperatures exceed 900 癈, the quality of diamond film is poorer with increasing substrate temperature, which is similar as the case of diamond film grown on Si substrate.By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion-assisted bombardment method at the substrate temperature of 700?00 癈and mixture gaseous of CH4 and H2 The effect of growth parameters on the diamond film is studied. The diamond film presents very low compressive stress and excellent field emission character. The mechanisms of diamond nucleation and growth are discussed, and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using CH4 and H2.
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