In Pecvd Preparation Of Nanocrystalline Silicon Films

Nanocrystalline hydrogenated silicon thin film (nc-Si:H) is a film made of siliconin nanometers. Its framework and its properties not only have close relationship with theother materials made of silicon, but also show a series of characters of low-dimensionalsemiconductors. This essay mainly studies the manufacture of the film of nc-Si:H, itscharacterization and its properties.The essay dissertates the theory and the process of the manufacture of nc-Si:H bythe usage of PECVD and illustrates the working principles of PECVD. The air used inexperiments is pure SiH₄. With the adoption of PECVD, the film of nc-Si:H is facturedon the surface of the silicon. And nc-Si:H has been given annealing heat treatment. Thetechnical condition is as follows: underlay temperature: 600℃, gas flux: 1.9sccm, radiofrequency: 13.56MHz, the power of electrical source: 50W, vacuum level: 5.0×10^-4Pa,the air pressure of deposition: 100Pa, the space between two poles: 20mm, the time foraggradation deposition: 30 min, the temperature for anneal:700℃.The essay illustrates the theory of the manufacture of the film in details andcharacterizes the film.And in the essay a series of properties of nanocrystalline hydrogenated silicon thinfilm is studied.