Modeling and simulation of transient radiation effects on partially-depleted silicon-on-insulator MOSFETs

Advancements in integrated circuit technologies have introduced new considerations for the study of radiation effects on electronic components. Silicon-on-insulator (SOI) technologies have limited volumes for collection of charge induced by pulsed-ionizing radiation due to isolation of active circuitry from the supporting substrate. Substrate isolation reduces primary photocurrents, but introduces parasitic devices which enhance the SOI device response to pulsed-ionizing radiation. Experimental evaluation of circuit responses to high intensity radiation pulses is difficult and expensive. Experiments lack attribution of observed results to internal processes. Computer modeling can provide a means to investigate internal mechanisms of radiation responses of devices, and provide predictive capabilities allowing design adjustments to meet radiation tolerance requirements. Simulations cannot replace testing, but provide a complementary procedure which can reduce iterative experiments and aid in identification of design weaknesses.; This dissertation presents computer simulation approaches for the study and prediction of the responses of partially-depleted silicon-on-silicon dioxide transistors and circuits to pulsed ionizing radiation. Transient-radiation responses are studied using PISCESII and TRIGSPICE. A model based on the mechanisms governing the transient-radiation response of SOI transistors is constructed from modified forms of existing TRIGSPICE models. The approach adopted in the model development is the superposition of radiation effects (electron-hole pair creation) on the basic physical structure and electrical characteristics of partially-depleted SOI device. The model is used to study and predict the transient-radiation responses of the basic SOI device and to quantify the role of body ties in reducing the adverse radiation response. A set of circuits comprising a representative basis for most digital circuits are simulated using the TRIGSPICE model.; Results of this work indicate that body ties are necessary to reduce transient-radiation induced effects to a tolerable level for high dose-rate applications. The number and placement of the body ties is dependent on the application and requirements, and the modeling approach presented can be used to quantify the needs of a particular design and requirement. This work provides the foundation for study of transient-radiation effects on next generation SOI technologies.