SGOI Novel Structure Fabrication And Investigation Of PⅢ Silicon-based Light Emitting Materials

SiGe-On-Insulator (SGOI) technology is ore of the most advanced technologies in nowadays microelectronics, which combines both advantages of SiGe and silicon-on-insulator (SOI) technologies. It has a great potential in future applications in high speed, low power and high density integrated circuits, opto-electronics, system-on-chip (SOC) and so on. Particularly, it is almost an ideal substrate material for realizing strained-silicon structures which are very competing and popular in present silicon technology. Unfortunately, SGOI research is greatly hampered by many difficulties and now is at its very beginning, thus has a long way to go. Hereby, we propose a method to fabricate SGOI novel structure with separation by implantation of oxygen (SIMOX), starting directly from pseuodomorphic SiGe thin films. And the obtained SGOI structure is systematically invesiigated in this thesis.On the other hand, in the research field of silicon-based light emitting, all developments, though there are some in recent yea;-, are still far from massive industrial applications. Plasma immersion ion implantation (PHI), a new competing technique for ion implantation, has bi;en applied in doping and fabrication SOI materials in microelectronics field, but it fails to penetrate any corner of optoelectronics up to now. In this thesis, we explore PHI technique in modifying silicon materials and then investigate their properties particularly light emitting ones.Under the above backgrounds, we in this thesis focus on:(1) epitaxy of pseuodomorphic SiGe thin film on silicon substrates and characterization of the obtained SiGe, then investigating the effects of hydrogen ion implantation into the SiGe/Si heterostructure; (2)fabricating SGOI novel structure with SIMOX starting from pseuodomorphic SiGe thin film and then characterizingthe SGOI structure. (3) implanting hydrogen ions into silicon with PIII and then investigating their optical properties; (4)performing ion implantation into silicon with methane or acetylene plasma source in PIII system, then analyzing the optical properties of the synthesized SiC film. The main results are summarized in the following:1 ) Successfully grow high quality SiGe film on Si substrate with ultra-high vacuum chemical vapor deposition (UHVCVD). Various characterizations show that the SiGe film has a good single-crystal quality, the Ge content in SiGe layer is uniform and about 14%. It has a strain rate of 95%, thus is almost fully strained.2) For the first time, realize a SGOI structure with SIMOX process from pseuodomorphic SiGe thin film, abandoning the graded SiGe buffer layer which widely used in previous reports. The modified SIMOX process fits well for SGOI fabrication.3 ) Propose a method to realize oxygen profile engineering in silicon by Geaddition and high temperature annealing.4 ) After analyzing the optical properties of ion implanted Si, we conclude that thelight emitting efficiency in silicon-based materials can be raised by introducing a certain disorder in silicon lattice, and PIII probably is a good technique which can introduce this kind of disorder in silicon.5 ) Synthesizing SiC thin films on silicon substrate through methane or acetyleneplasma implantation in silicon; the adoption of self-ignited mode is efficient for reducing the phenomena of amorphous carbon deposition.