Fabrication Of SiGe-on-Insulator Novel Material And Its Applications

Nowadays microelectronics is growing fast and penetrating into each economical field of any country. Many companies, governments, institutes and universities are crazy for the development of new microelectronics technology for its blueprint. However, it seems that people have almost reached the vertex of bulk Silicon technology. It would not go any further without breakthroughs. Fortunately, Silicon-On-Insulator (SOI), Silicon Germanium (SiGe), Cu plating and low K technologies appear and greatly relieve the conflicting. SiGe-On-Insulator (SiGeOI), which appears very recently, integrates both the advantages of SOI and that of SiGe and thus attracts much attention for the potential applications in low voltage, low power consumption, high dense integrated circuits and optoelectronics, system on chip etc. But people are in the very beginning of the SiGe-OI material fabrication research. This work focuses on these three facets: 1. SiGe film preparation; 2. SiGe SIMOX; 3. SiGe Smart-cut and behavior of SiGe/Si heterostructure implanted with hydrogen.SiGe film preparation: SiGe films were grown on silicon substrate using solid source molecular beam epitaxy (SSMBE), gas-solid source molecular beam epitaxy (GSMBE) and ultra high vacuum chemical vapor deposition (UHVCVD) technologies. Results from various measurement technique show that SiGe films grown by UHVCVD have higher crystal quality than those by SSMBE and GSMBE. And UHVCVD is proposed to be employed in the further work of our SiGe-OI fabrication.SiGe SIMOX: Oxygen ions with high dose were implanted into SiGe grown directly on silicon substrate for the first time, and SiGe-OI novel structure was formed successfully with additional high temperature annealing;It has been confirmed that Oxygen implantation with 45keV, 3 1017cm-2 and annealing at 12500C in Ar + 5 % O2 for 5 hours, are fit for the formation of SiGe-OI structure; Ge loss during the high temperature annealing has been observed, which is originated from Ge volatility and Ge diffusion; It has been proposed to use nanoporous layer induced by H+/He+ implantation to surppress Ge diffusion and to use surface oxidation to overcome the upper limit of SiGe SIMOX.SiGe Smart-cut: Hydrogen ions were implanted into SiGe material and followed by high temperature process (4000C to 7000C); Blistering study was done and suggested the possibility of SiGe layer transfer by Smart-cut technology; It is concluded that the bubble formation is easier in SiGe than in Si, and the strain in SiGe/Si and the difference of binding energy in SiGe and in Si could possibly contribute to this effect.Behavior of SiGe/Si implanted with hydrogen: Gave a detailed study on SiGe implanted by beamline or PHI hydrogen implantation; It has been found that great strain is introduced into SiGe by hydrogen implantation and this strain could be alleviated by high temperature annealing; Both for conditional beamline implantation and PIII hydrogen implantation, 600 is appropriate for the post-implantation treatment.