The problem of dissipate heat is an important factor which confines the development of high power semiconductor laser. The analysis on microchannel heatsink of high power semiconductor laser can achieve lower heat resistant and fine temperate homogeneity, thus ensure long longevity and steady work.We choose silicon as the material of microchannel heatsink, deposite SiN coat on the microchannel and using the tecchnic of react ion etch to etch the pattern on it, and cautery it with anisotropy method. We adopt the structure of silicon-glass-silicon, the cool water come through the entrance into upper layer silicon microchannel, then by mid-glass layer slit to down-silicon layer and drained to outer cool recycle system. Seal the structure of the microchannel, and solder semiconductor laser bar on the top of the microchannel, by the wire bonding from the N-side of the laser bar to the packages n-side contact. This is accomplished using approximately I .25mm-diameter Au wires. At last, connect the water recycle system and radiate system, seal the entrance of the coolant.After testing, the heat resistance of the sample is less than 0.25 C/W.
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