Accurate modeling of heavy-ion-induced single event phenomena in semiconductors

Using a unique combination of ion track modeling, numerical device simulation, and high-energy heavy ion charge collection measurements, this research describes a first-order modeling approach for accurate single-event simulations. This work also serves to extend the previous combination of charge collection experiments and simulations for heavy ions with atomic weights greater than 50 amu from ions with energies of less than 5 MeV/amu to ions with energies of greater than 10 MeV/amu. The high-energy heavy ions used in this work reflect ions that are more representative of very-high-energy cosmic radiation than the lower-energy heavy ions typically used in single-event effect tests and simulations.;This dissertation describes a series of heavy-ion-induced transient simulations and charge collection measurements. The simulations show that charge collection within both single- and multiple-junction test structures can be accurately modeled for a variety of high-energy heavy ions and bias conditions. In those instances where the simulations may not fully correspond with the experimental data, the simulations indicate the same trends as the experimental data and show no greater variations than some of the part-to-part variations observed in the experiments.;The simulations highlight the importance of ion track structure in understanding the transient responses produced by high-energy heavy ions and show the dramatic differences in charge collection that different track structure models could produce in a theoretical "bullseye" test structure. The simulations also demonstrate the synergistic effects of carrier-carrier scattering and Auger recombination and low-level minority carrier lifetimes on charge collection within the test structures.;The overall viability of using simulation to assess single event phenomena in semiconductors and the implications of the simulation and charge collection measurements on heavy ion single event testing are discussed. Areas identified for possible future investigations include extending the simulations to sub-micron devices, investigating mixed-mode single event simulations, experimental investigations of ion track structure using a bullseye test structure, and the extension of many carrier transport and recombination models to include the high carrier concentration conditions found in the ion track.