| The focus of this research work involved the conceptualization, design, simulation, fabrication and analysis of several DI lateral MOS-Bipolar power devices. The devices described in this work were fabricated using a 9-mask, 200-step DI-LIGBT process. A new technique called the step drift doping profile was proposed for DI RESURF devices and shown using extensive numerical simulations to achieve almost uniform electric field distribution in the drift region resulting in near ideal breakdown voltages with reduced the process complexity.; An analytical model was developed for the DI-LPiN diode with the aid of numerical simulations and verified using experimental measurements. The MPS diode was experimentally demonstrated in DI technology for the first time and was shown to provide an attractive tradeoff between forward and switching characteristics by simply changing the percentage of Schottky area during device layout. The integral diodes of the DI LDMOSFET and CS-LIGBT were experimentally characterized and demonstrated to have superior performance compared to the LPiN diode thus eliminating the need for a separate LPiN diode resulting in reduced chip area.; A one-dimensional analytical model was developed for the DI-LIGBT with the aid of numerical simulations to explain the effect of drift region thickness on the measured forward characteristics of the DI-LIGBT. The performance of the CS-LIGBT and the SC-LIGBT structures was experimentally compared and it was concluded that the SC-LIGBT is more suitable for high speed applications due to the superior performance of its integral diode. A new MOS-gate lateral device structure called the LIGFT was proposed and experimentally shown to eliminate the parasitic thyristor latchup problem of the LIGBT. The device is fully compatible with the LIGBT process making it attractive for high temperature applications. |
