A method for determining the dependence of integrated circuit performance on silicon process, device and circuit parameters |
Posted on:2002-01-06 | Degree:Ph.D | Type:Dissertation |
University:Florida Institute of Technology | Candidate:Sipahi, Levent Bahri | Full Text:PDF |
GTID:1468390011496872 | Subject:Engineering |
Abstract/Summary: | |
The goal of this project is to develop a structured methodology for achieving a design of a block of circuit in an IC which is more compliant to the specification using a multiple statistical simulation approach. The circuits chosen to demonstrate this new method will be BiCMOS and MOS low noise amplifier circuits. This study concerns with a method for statistical design tool and demonstrating on Bipolar LNA (Low Noise Amplifier) and CMOS LNA circuits extensively used in wireless personal communication systems. Using micro-level semiconductor device parameters and associated manufacturing process parameters for the circuit parameters of interest. The physics-based device and process models generated in MATLAB© are then coupled with proprietary statistical simulation software STADIUM© to create a robust circuit design which gives rise to a more compliant product with higher yields and shorter IC product development cycle with lower cost. |
Keywords/Search Tags: | Circuit, Method, Process, Device, Parameters |
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