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0.18μm Logic Process Flow And Process Control Monitor

Posted on:2013-09-03Degree:MasterType:Thesis
Country:ChinaCandidate:Y LiuFull Text:PDF
GTID:2268330392470785Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
The technology of IC developed quickly under the Moore’s Law, continually, the feature dimension of device shrink, the function of the circuit consummate and the integration level raise. The feature dimension of device approached to nanometer level, the working frequency of circuit entered GHz times and the integration level of ASIC exceeded ten million gate transistor dimensions. Meanwhile, the CMOS chip density on wafer increase continually, every step determine the crucial issue of success or failure, as contamination, junction depth, crucial dimension and the quality of film etc. Moreover, the introduction of new material and technology would bring on new failure issue for chip. Control monitor is very important for describing the chip characteristic and checking the yield.PCM is important links in the semiconductor production chain. It mainly monitors the electrical parameter of CMOS chip, reflect the production if meeting the technology criterion and have any quality issue in manufacture, it is general control monitor for integrated process.Firstly, gave a simple overview for PCM test system, theory and method, investigate the role of PCM for semiconductor workmanship. Then present the process flow base on8inch wafer0.18μm logic product process, mainly including Device Formation, Salicide to ILD deposition and Multilayer interconnection. PCM parameters related process flow closely and the knowing of flow is important for the understanding of PCM parameters.The paper mainly studied the common PCM parameters including test method, test structure, physical significance and the related process steps, got a profound understanding for the relationship between the parameters and manufacturing technique. Finally, the paper studied the PCM failure samples, analysis the related process which may induced to the failure, found the crucial steps, to provide against a rainy day in future production and made qualified guarantee for wafer fab out.
Keywords/Search Tags:PCM, Device parameters, CMOS process, Salicide, Multilayerinterconnection, Resistance
PDF Full Text Request
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