Research And Design Of Ultra-Wideband Low-Power RF Receiver Front-End Circuit

Ultra-wideband technology has the advantage of faster transfer rates,higher spectral efficiency,lower cost,and can be widely used in wireless LANs,wireless personal area networks,wireless sensor networks,radar and positioning and other fields.Ultra-wideband technology has become a major highlight of short distance wireless communications.The rapid development of ultra-wideband technology puts forward higher requirements to the performance of ultra-wideband communication system receiver.Currently,various mobile terminal apparatus have been produced,and the function become more perfect,and the power consumption increase rapidly.Under the premise of not yet achieved a major breakthrough in battery technology,how to reduce the power consumption of the receiver front-end circuit,delay their use of time,has become an important issue facing the ultra-wideband receiver.For the development of ultra-wideband wireless communication technology is important.This paper focuses on how to reduce the power consumption of ultra-wideband radio receivers front-end circuit,and how to improve the performances of radio receiver,and other issues.RF receiver's key modules,low noise amplifier,mixer,frequency synthesizer and oscillator have been studied and discussed.(1)This paper presents a novel current mode differential UWB LNA.A common-gate stage with transformer realizes a low noise input matching and produces a current gain.The output of the LNA is differential current,which can avoid the current-to-voltage conversion.The LNA is simulated with TSMC 0.18?m RF CMOS process.Simulation results show that the max noise figure is only 2.65 dB,transconductance gain is larger than 18.7 dB,and third order input intercept point is about 2.8dBm over 3?5 GHz.With a voltage of 0.8 V,the power consumption is 11mW.A comparison with conventional UWB LNA shows that this LNA has advantages of low voltage,low noise,high gain,and high linearity.(2)This paper presents an ultra-low-power low noise amplifier(LNA)for ultra-wideband(UWB)receivers.By adopting current-reuse and forward body bias techniques,the total measured conversion gain of the receiver is 11.4?12.2dB dB and DSB NF is below 4.3dB,the input and output reflection coefficient are lower than-10dB.All of these results satisfy the requirements of the RF receiver.Especially,the power consumption of the circuit is 1.9mW with a 0.8V supply voltage,which meets the demand for ultra-low-power applications.(3)This paper presents a 3.110.6GHz low voltage low power down-conversion mixer using TSMC 0.18?m RF CMOS process.The mixer adopts forward body bias technique to decrease the power dissipation and supply voltage.The current-reuse bleeding circuit is also applied to improve the conversion gain and linearity.The simulation results have show that the mixer achieves a conversion gain of 12.1?18.8dB,a SSB NF of 7.1?11.4dB,an IIP3 of-1.8dBm,while its power dissipation is only 1.9mW under a 0.8V supply voltage.It is especially suitable for low power wireless communication applications.(4)This paper presents a non-inductive quadrature voltage controlled oscillator(QVCO),which can work at L-band.The QVCO is constituted by a single current differential cross transconductance amplifier(CDTA),can work at 1.45GHz,By changing the bias voltage,frequency tuning range can reach 145MHz.Since the oscillator does not contain large inductive element,the circuit layout area occupied only 0.091mm2.(5)This paper presents a low-power multi-modulus programmable divider using chartered 0.18?m CMOS process.The TSPC technology is adopter and the TSPC D flip-flop is designed to lower the power consumption in design of implementation circuit.The simulation result shows that the output signal is large.Its power dissipation is 3.27mW under a 1.8V supply voltage.It is suitable for the application in wireless communication system.In summary,this paper studys the key modules of ultra-wideband RF receiver front-end circuit,low noise amplifiers,mixers,programmable divider and VCO.To promote the development of domestic wireless communication technology and improve the RF receiver autonomous chip R&D capabilities have a certain role.