Low Noise Amplifier In Cmos Bluetooth Transceiver Design And High-frequency Noise

For RF circuits within a CMOS wireless transceiver, low noise performance is very important. Unfortunately, neither BSIM3 nor the well-known van der Ziel model is applicable to the high-frequency noise in sub-micron MOSFET, for this reason, RF noise modeling of sub-micron device is a key part of this dissertation.Firstly, from the generation mechanism of thermal noise in MOSFET, that is, random collisions of carriers with the lattice atoms or ionized impurities, the relationship between the diffusion current noise caused by random change of carrier diffusion direction, the drift current noise caused by the irregular change of carrier velocity and RF noise from the fluctuation of carrier velocity and Nyquist thermal noise is analyzed microscopically.Secondly, based on physical origin of high-frequency noise and short-channel effect, both drain current noise and induced gate current noise are studied hi detail, quantitative formulations are given and the complete high-frequency noise model is obtained; the relationship between MOSFET noise and its working state, dimension and the applied bias is studied, and circuit design clue is acquired. By means of circuit theory of linear noisy networks and MATLAB, the noise analysis of a complicated system is transformed into matrix computation of correlation matrixes that are used to represent noise performance of the individual networks, and the influence of high-frequency parasitics and bias on system noise parameters is analyzed.Another important work of this dissertation is the design of an RF low-noise amplifier integrated within a Bluetooth transceiver chip. Gain-control is realized by controlling of bias voltage and current that is provided by the bias circuit; as an effort to meet commercial requirements, the package and the BSD protection are included, design methodology is discussed from the aspects of noise optimization, impedance match, forward voltage gain and linearity, and harmful effect of parasitics is studied hi detail; in the implementation of circuit and its layout, some measures are adopted to alleviate the performance degradation caused by parasitics; hi addition, much time is spent on the study of circuit test strategy and RF PCB design. Bluetooth transceiver chip is fabricated in TSMC 0.35- u m CMOS digital process. For low noise amplifier, the measured forward voltage gain 821 and impedance match SH are approximate to the designed values; the noise figure NF is a little larger than the prediction; the output central frequency is smaller because of incomplete consideration of parasitesand some other reasons.In the end of this dissertation, summary of previous work and suggestion for future work are given.