Study Of IC Local Defect And Its Related IC Functional Yield And IC Interconnects Electromigration

AbstractFirst, the local equivalent circular defect theory used to study the size distribution statistics of the local defects aroused in the IC manufacturing process has been presented for the first time, so an norm is available which can be used to determine the accuracy of a defect size model. Secondly, the nature of the directional function and the characteristic parameters of real defect outlines are analyzed in theory. An fractal interpolation approach used to simulate the real defect outlines and a new model used to estimate the directional function of real defect outlines are developed, and the algorithms used to evaluate the IC critical area are improved. Finally, the?electromigration of IC interconnects are studied. The new model of IC interconnects electromigration related to the IC missing material defect is developed. The simulation results indicate that the IC defects have great effect on the IC interconnects electromigration.