The Electro-migration Study For Al Interconnects

The chip reliability performance is the important topic of semiconductor in-dustry along with the chip size reduction, and electro-migration phenomenon is the major reliability failure for backend interconnection. The Al-Cu interconnection is the most popular process when minimum characteristic dimension larger than 0.13μm. The reason to select AL because it has low resistance and can easily com-patible with Si process, low cost is anther benefit. But Al interconnect also suffer electro-migration issues continuously. So studying the process effects on Al elec-tro-migration problems and understands EM phenomena well, will provide solutions for industry. It is also have benefit to improve the process capability for semicon-ductor industry.This paper fan out the fabrication process effect on electro-migration, detail descried Al interconnection process, structures, and analysis the key point of Al de-position process, etch process, clean process. It summarized the existing theories and deduced the correlation between process with electro-migration base on experiment result.In the experimental part, the dissertation presented the influencing factors from different process, such as CVD, etch, clean. And provide the method to im-prove electro-migration from process point of view. The improvement methods have applied in manufacture and gain the benefit already.