Modeling Of Silicon-Based Millimeter-Wave Passive Devices And The Phase-Locked Loop Design

With the rapid development of wireless communication and the popularization of intelligent handheld electronic devices, the technology that support Gbit/s transmission rate is demanded more and more urgent. The mode and equipment of traditional wireless communication have been difficult to meet the requirements of future ultra-high speed, large data wireless transmission. Compared with microwave frequency band, millimeter-wave frequency band not only has higher rate, larger capacity, but also has the advantage of cost. In the millimeter-wave frequency band, spectrum resources of 60 GHz frequency band are free to used, so that the cost of wireless communication around 60 GHz is reduced greatly. Along with the rapid development of silicon-based technology, the transistor ft of advanced technology has surpassed millimeter-wave frequencies. Compared with III-V chips, the performance of millimeter-wave integrated circuits has been enhanced much better. Furthermore, the silicon-based technology can provide the solution of system on chip(Soc) and the low cost for mass production of consumer electronics products. Therefore, studying the technology of silicon-based millimeter-wave integrated circuit design has a great significance for development of high and new technology and economic in china. At present, equivalent circuit models of inductor provided by foundries are only 30 GHz below, the model of transformers and baluns are not provided. However, the models of passive component, such as inductors, transmission lines and transformers have important influences on the performance of integrated circuits. Therefore, accurately modeling for passive components is important to millimeter-wave circuit design. The circuit of Phase-locked loop as a key part in wireless transceiver can provide frequency signal for on-chip transceiver system, so studying the phase-locked loop circuit design is very important.Based on the physical model of silicon-based inductors and transformers, the loss characteristics of silicon substrate and coupling effects of passive components in millimeter wave frequency band,this paper studied the coupling effects and loss characteristics of silicon-based on-chip multiple inductors and six-port M:N transformers completely by electromagnetic field and circuit combined analysis method. Also the equivalent lumped model and parameter extraction method of on-chip multiple coupled inductors and six-port M: N transformers are provided. Then, a 2.8GHz~5.2GHz phase-locked loop and 56GHz~64GHz voltage controlled oscillator are designed in this paper. The contents as follows:(1) Silicon-based on-chip multiple coupled inductors modeling in millimeter-wave region: The coupling effects exist among on-chip multiple inductors, traditional model of single inductor cannot characterize the parasitic effects and coupling effects of on-chip multiple inductors. In this paper, equivalent capacitances and mutual inductances are combined to express the parasitic and coupling effects between on-chip adjacent inductors by analyzing the phenomenon of electromagnetic coupling among on-chip multiple inductors. And on this basis, a new equivalent circuit model structure of on-chip multiple coupled inductors is developed and obtained. Meanwhile, a few of electromagnetic simulation and measurement structures are designed and taped out. Compared with electromagnetic simulation and measured data, the proposed model and parameter extraction method can predict the performance of on-chip multiple inductors from DC to 120 GHz.(2) Silicon-based on-chip six-port M:N transformer modeling in millimeter-wave region: In silicon-based integrated circuits, the center tap of on-chip transformers play role as conductor connected to voltage source. However, traditional equivalent circuit model of transformer is operated as four-port model, the influence of center tap has not considered. Also the traditional equivalent circuit model of transformer cannot be used as balun model directly. In this paper, the equivalent circuit model and parameter extraction method of silicon-based six-port M:N transformer are developed and obtained by studying the phenomenon of electromagnetic coupling and loss characteristics of transformers. Impedance of the primary and secondary windings in transformer are modeled by two series branches, respectively. The loss characteristics of substrate are modeled by four group of shunt branches. The electric coupling and magnetic coupling between the primary and secondary windings are modeled by capacitances and mutual inductances. All of component parameters are extracted from electromagnetic simulated S-parameters. Compared with electromagnetic simulation and measured data, the proposed model and parameter extraction method can predict the performance of on-chip six-port M:N transformers from DC to 100 GHz.(3) Silicon-based phase-locked loop integrated circuit design: Phase-locked loop plays a key role both in wire or wireless communication as an important part of transceiver. This paper introduces the basic knowledge of phase-locked loop first, then simulated system of a 2.8GHz~5.2GHz integer-N phase-locked loop and designed a 2.8GHz~5.2GHz voltage controlled oscillator by CMOS 180 nm technology. Also the 56GHz~54GHz voltage controlled oscillator is designed by CMOS 65 nm technology, which output single-ended voltage swing is more than 800 m V while loaded 50Ω.