| Thin film resistance sensor devices have excellent characteristics such as small size,high accuracy,high sensitivity and low noise,and are widely used in defence,aerospace,big data information storage and automotive electronics.By conducting noise detection research,the relevant basic theories of carrier transport characteristics in thin film resistance sensor devices can be verified,and the physical essence of noise phenomena can be further explored.Combined with accurate characterisation of noise,the correlation between stress damage,defects and reliability of thin film devices and low-frequency noise can also be investigated by means of non-destructive testing,which can help optimise the preparation process and improve the signal-to-noise ratio(S/N)of the devices.This thesis systematically studies the noise model of electronic components,four probe measurement technology,low noise DC bias power supply technology,and low noise amplification technology,and constructs a system for low-frequency noise detection of thin film resistance sensor device.And the system was used to detect low-frequency noise in nickel chromium thin film resistors and perovskite thin film resistors.The main content and innovative points of this thesis are as follows:(1)Based on the four probe method for noise measurement,a low noise DC bias power supply with high output impedance and low noise current and a low noise amplification circuit were designed and tested for performance,achieving single channel direct measurement and dual channel cross spectral measurement schemes.(2)A low-frequency noise detection system for thin film resistance sensor device was designed,and it was experimentally demonstrated that the system can effectively reduce the influence of system noise on the low-frequency noise detection results.(3)The non-destructive testing of low-frequency noise in nickel chromium thin film resistors was carried out using this system.The experimental results showed that the low-frequency noise includes both 1/f noise and G-R noise,with G-R noise playing a dominant role.Analysis shows that G-R noise is mainly caused by heavy metal impurities.(4)The non-destructive testing of low-frequency noise in perovskite thin film resistors was carried out using this system.The experimental results showed that the low-frequency noise was mainly 1/f noise,and there was a correlation between the 1/f noise level and sample thickness.Variations in sample thickness lead to changes in material stresses,which affect the distribution of defects and carrier transport properties in thin film devices.Non destructive testing with 1/f noise can effectively evaluate the preparation process level of perovskite thin film resistors,effectively improve the signal-to-noise ratio(S/N),accuracy,and sensitivity of thin film resistance sensor devices. |
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