Research Of High Power Tan Thin Film Resistor And Integration

Now, Microwave circuity must fit high-intensity combat,high working feequencyand power.also it must have small size and small mass.Faced with such high demand,only good heat dissipation,high degree integraed and high degree miniaturizated filmmicrowave resistors can meet the requirements.In this paper,microwave thin filmresistors were proceed from the thin film marerials.It contains three main parts.(1) Thepreparation of TaN thin film materials.(2) The design and simulation of microwavepower resistors.(3)The preparation and test of thin film resistor.Firstly, use of magnetron sputtering with different sputtering pressure, N2partialflow, different sputtering time and annealing temperature to analysis these factors howinfluced the square resistance, the TCR and the thickness of the TaN thin film. And takethe repeatability of test. Secondly, TaN micro-wave power resistors of1W, DC-10GHzand2.5W, DC-5GHz were designed and simulated by HFSS.softwave respectively.Atlast,the TaN micro-wave power resistors were prepared by the lithography of the thinfilm.The results show that:when the sputtering pressure was0.4Pa，the film has a stablestructure and good deposition; when the N2partial flow was2%, the film had a stablestructure, the square resistance and the TCR were both fitable; when the sputtering timewas30minutes,the squate resistance was20/sq, the TCR was87.19ppm, they wereboth fitable; when the annealing was400℃,the stability of the thin film was high,thesquare resistance was higher than50/sq,the TCR was less than100ppm;Therepeatable and comparative experiments were very consistent. The result showedthat:the VSWR was less than1.2in DC-10GHz and DC-1GHz, the resistance was moreor less50.The actual power load and the micro-wave properities were consistent inthe design results.